[SO-PS-02] 02: Advanced and Emerging Memories / New Applications

1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-02-09] Nitrogen Incorporated Interlayer for Enhanced Hf-Zr-O Ferroelectric Tunnel Junctions in Ternary-Content-Addressable-Memory

〇Jaekyeong Kim¹, Manh-Cuong Nguyen^1,2, An Hoang-Thuy Nguyen¹, Anh-Duy Nguyen¹, Hyunsoo Kim¹, Kyungsoo Hwang¹, Geon Park¹, Hoyeon Shin¹, Siun Song¹, Daewoong Kwon², Rino Choi¹ (1. Inha Univ. (Korea), 2. Hanyang Univ. (Korea))

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