[SO-PS-02] 02: Advanced and Emerging Memories / New Applications

1:56 PM - 1:58 PM JST(4:56 AM - 4:58 AM UTC)

[SO-PS-02-14] Fatigue Recovery and Endurance Improvement under Low Operating Voltage of HfZrO₂/Ge MF(I)S Capacitor fabricated at BEOL-Compatible Temperature

〇Jai-Youn Jeong^1,2, Kyeol Ko¹, Kyunghwan Kim¹, Changhwan Shin², Jae-Hoon Han¹ (1. The Korea Inst. of Science and Technology (KIST) (Korea), 2. The Korea Univ. (Korea))

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