[SO-PS-04] 04: Power / High‐speed Devices and Materials

1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-04-08] Effects of Moderate-Temperature Annealing on Near-Surface Defects in Mg-Implanted GaN Studied Using MOS Structures

〇Genta Shindo¹, Yuki Hatakeyama¹, Masamichi Akazawa¹ (1. Hokkaido University (Japan))

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