2024 International Conference on Solid State Devices and Materials
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Session Details

Short Oral Presentation04: Power / High‐speed Devices and Materials

[SO-PS-04]04: Power / High‐speed Devices and Materials

Tue. Sep 3, 2024 1:30 PM - 2:10 PM JST
Tue. Sep 3, 2024 4:30 AM - 5:10 AM UTC
Room D (Medium Hall)(2nd Floor)
Session Chair: Taketomo Sato (Hokkaido Univ.), Naotaka Iwata (Toyota Technological Inst.)
1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-04-01]Unipolar AC Bias Stress Degradation Mechanism in Heterogeneous Ga2O3-on-SiC MOSFET

〇Chenyu Liu1, Yibo Wang2, Chunxiao Yu1, Wenhui Xu3, Xiaole Jia1, Shuqi Huang1, Zeyu Yang1, Xiaoxi Li4, Bochang Li4, Zhengdong Luo1,4, Cizhe Fang4, Yan Liu1, Tiangui You3, Xin Ou3, Yue Hao1, Genquan Han1,4 (1. School of Microelectronics, Xidian Univ. (China), 2. Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Academy of Sci. (China), 3. Shanghai Inst. of Microsystem and Info. Tech., Chinese Academy of Sci. (China), 4. Hangzhou Inst. of Tech., Xidian Univ. (China))
1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-04-02]Improvement in channel mobility of recess-gate GaN MOSFET with Al0.28Si0.72O gate dielectric using AlGaN/GaN selective-area regrowth method on GaN-on-Si substrate

〇Po-Chin Huang1, Daimotsu Kato1, Jumpei Tajima1, Hiroshi Ono1, Masahiko Kuraguchi1, Toshiki Hikosaka1 (1. Corporate Research & Development Center, Toshiba Corp. (Japan))
1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-04-03]Electrical Characteristics of Aluminum Oxide and Aluminum Oxynitride with a Thin SiO2 Interfacial Layer as Gate Stack Dielectric on the Nitric Oxide (NO) Gas Treated Silicon Carbide (SiC) Substrate as the MOS Capacitor under Rapid Thermal Annealing

〇Cheng-Li Lin1, Bo-Xian Su1, Yu-Lun Lee1, Pi-Chun Juan2 (1. Feng Chia Univ. (FCU) (Taiwan), 2. Ming Chi Univ. of Tech.(MCUT) (Taiwan))
1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-04-04]Evaluation of Thermal Stress of N-type β-Ga2O3 Crystals with Ti/Au Electrode Film by Micro-Raman Spectroscopy

〇Jun Suda1, Ryoya Kakamu1 (1. School of Engineering of Chukyo University (Japan))
1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-04-05]Characterization and Analysis on ESD Robustness of SiC VDMOSFET

〇Chao-Yang Ke1, Ya-Zhi Hu1, Ming-Dou Ker1 (1. Inst. of Electronics, National Yang Ming Chiao Tung Univ. (Taiwan))
1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-04-06]A Study of Heteroepitaxial Single Crystal β-Ga2O3 δ-doped MESFET on C-plane Sapphire by Mist-CVD

〇FANG-YU HSU1, HAO-CHUN HUNG1, CHING-YU CHENG1, YIN-CHU HSIAO1, CHIA-CHENG HSU1, WEI-CHOU HSU1 (1. National Cheng Kung University, NCKU (Taiwan))
1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-04-07]Reduced Ohmic Contact Resistance in AlGaN/GaN HEMTs via Graphene Insertion and Recessed Patterns

Chen-Hsiang Chung1, 〇Yue-ming Hsin1, Bo-Hao Chen1, Yu-Han Hung1, Ching-Yuan Su1 (1. National Central Univ. (Taiwan))
1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-04-08]Effects of Moderate-Temperature Annealing on Near-Surface Defects in Mg-Implanted GaN Studied Using MOS Structures

〇Genta Shindo1, Yuki Hatakeyama1, Masamichi Akazawa1 (1. Hokkaido University (Japan))
1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-04-09]Achieve E-mode GaN MIS-HEMTs Through Thin Barrier Technology

〇TSUNG YING YANG1, Jui Sheng Wu1, You Chen Weng1, Tzu Fan Liu1, Tzu Hao Tseng1, Pei Xin Beh1, Fu Ching Tung2, Shih Hsiang Lai2, Edward Yi Chang1 (1. National Yang Ming Chiao Tung University (Taiwan), 2. Industrial Technology Research Institute (Taiwan))
1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-04-10]Photoelectron holographic study for atomic site occupancy of the Si dopant in κ-Ga2O3(001)

〇Yuhua TSAI1,2, Yusuke Hashimoto3, Piero Mazzolini4,5, Tomohiro Matsushita3, Yoshiyuki Yamashita1,2 (1. National Institute for Materials Science (NIMS) (Japan), 2. Kyushu University (Kyushu Univ.) (Japan), 3. Nara Institute of Science and Technology (NAIST) (Japan), 4. University of Parma (UNIPR) (Italy), 5. Institute of Materials for Electronics and Magnetism (IMEM-CNR) (Italy))
1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-04-11]TCAD-based Collector-Emitter Capacitance Model of an IGBT Compact Model for Accurate Power Efficiency Prediction

〇Takeshi Mizoguchi1, Masahiro Tanaka1 (1. Nihon Synopsys G.K. (Japan))
1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-04-12]First-principles Study on Electronic Structure and Optoelectronic Properties of P-doped β-Ga2O3 with Intrinsic Defects

〇Hui Li1, Dongyuan Zhai1, Qihao Zhang1, Jiwu Lu1 (1. The Univ. of Hunan (China))
1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-04-13]High-Frequency Performance of AlGaN/GaN MIS-HEMTs for Cryogenic Applications

〇Chuang-Ju Lin1,2, Bo-Jun Huang2, Bo-Yuan Chen1, Kun-Ming Chen1, Edward Yi Chang2 (1. The Inst. of Taiwan Semiconductor Research (Taiwan), 2. The Univ. of National Yang Ming Chiao Tung (Taiwan))
1:56 PM - 1:58 PM JST(4:56 AM - 4:58 AM UTC)

[SO-PS-04-14]Effect of Al2O3 deposition temperature on the electrical properties of Al2O3/β-Ga2O3 (001) metal oxide semiconductor capacitors

〇qihao zhang1, Dongyuan Zhai1, Hui Li1, Min He1, Jiwu Lu1 (1. The Univ. of Hunan (China))
1:58 PM - 2:00 PM JST(4:58 AM - 5:00 AM UTC)

[SO-PS-04-15]Analysis of ESD Capability of SiC MOSFET with Various Cell Designs

〇Wei-Shan Zou1, Kung-Yen Lee1,2, Yan-Yu Wen2, Pei-Chun Liao1, Jian-Jie Chen1, Tsai-Pei Lu1, Xue-Fen Hu1 (1. Department of Eng. Sci. and Ocean Eng., Nat'l Taiwan Univ. (Taiwan), 2. Graduate School of Advanced Tech., Nat'l Taiwan Univ. (Taiwan))
2:00 PM - 2:02 PM JST(5:00 AM - 5:02 AM UTC)

[SO-PS-04-16]Snapback in Diamond p-i-p Structure Containing a Small Amount of n-type Impurity in the i-layer

〇Kohei Mishima1, Akihiko Watanabe1 (1. Kyushu Inst. of Tech. (Japan))
2:02 PM - 2:04 PM JST(5:02 AM - 5:04 AM UTC)

[SO-PS-04-17]RF Performance Analysis of Double-Channel Fin-HEMT with Small-Signal Modeling

〇Ren-Hong Zhang1, Po-Hsun Hsu1, Yu-Hsuan Lu3, Yuan-Hung Huang1, Tsung-Hsien Lin1, Li-Wei Lin1, Chao-Hsin Wu1,2,3,4 (1. Graduate Inst. of Photonics and Optoelectronics, National Taiwan Univ. (Taiwan), 2. Center for Quantum Science and Engineering, National Taiwan Univ. (Taiwan), 3. Graduate School of Advanced Tech., National Taiwan Univ. (Taiwan), 4. Graduate Institute of Electronics Engineering, National Taiwan Univ. (Taiwan))
2:04 PM - 2:06 PM JST(5:04 AM - 5:06 AM UTC)

[SO-PS-04-18]Analysis of Errors in Junction Temperature Estimated by Temperature-Sensitive Electrical Parameter for Parallel-Connected Power Devices

〇Shuhei Fukunaga1, Tsuyoshi Funaki1 (1. Osaka University (Japan))
2:06 PM - 2:08 PM JST(5:06 AM - 5:08 AM UTC)Late News

[SO-PS-04-19 (Late News)]Impacts of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC Trench MOSFET

〇Momoko Inayoshi1, Naotoshi Hikosaka1, Ryuki Kamiya1, Eiji Kagoshima2, Shigehisa Shibayama3, Mitsuo Sakashita3, Hidemoto Tomita2, Tsuyoshi Nishiwaki2, Hirokazu Fujiwara2, Osamu Nakatsuka3, Noriyuki Taoka1, Wakana Takeuchi1 (1. Aichi Institute of Tech. (Japan), 2. MIRISE Technologies (Japan), 3. Nagoya Univ. (Japan))
2:08 PM - 2:10 PM JST(5:08 AM - 5:10 AM UTC)Late News

[SO-PS-04-20 (Late News)]Performance Enhancement of 3C-SiC n-MOSFET by Channel Structure Improvement and Forming Gas Annealing for a Gate Stack

〇Rima Nishizaki1, Dong Wang1, Keisuke Yamamoto1, Hiroki Uratani2, Yoshiki Sakaida2, Shigeomi Hishiki2 (1. Kyushu Univ. (Japan), 2. Air Water Inc. (Japan))
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