[SO-PS-04] 04: Power / High‐speed Devices and Materials

1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-04-10] Photoelectron holographic study for atomic site occupancy of the Si dopant in κ-Ga₂O₃(001)

〇Yuhua TSAI^1,2, Yusuke Hashimoto³, Piero Mazzolini^4,5, Tomohiro Matsushita³, Yoshiyuki Yamashita^1,2 (1. National Institute for Materials Science (NIMS) (Japan), 2. Kyushu University (Kyushu Univ.) (Japan), 3. Nara Institute of Science and Technology (NAIST) (Japan), 4. University of Parma (UNIPR) (Italy), 5. Institute of Materials for Electronics and Magnetism (IMEM-CNR) (Italy))

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