Presentation Information
[SO-PS-04-19 (Late News)]Impacts of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC Trench MOSFET
〇Momoko Inayoshi1, Naotoshi Hikosaka1, Ryuki Kamiya1, Eiji Kagoshima2, Shigehisa Shibayama3, Mitsuo Sakashita3, Hidemoto Tomita2, Tsuyoshi Nishiwaki2, Hirokazu Fujiwara2, Osamu Nakatsuka3, Noriyuki Taoka1, Wakana Takeuchi1 (1. Aichi Institute of Tech. (Japan), 2. MIRISE Technologies (Japan), 3. Nagoya Univ. (Japan))