Presentation Information

[SO-PS-04-20 (Late News)]Performance Enhancement of 3C-SiC n-MOSFET by Channel Structure Improvement and Forming Gas Annealing for a Gate Stack

〇Rima Nishizaki1, Dong Wang1, Keisuke Yamamoto1, Hiroki Uratani2, Yoshiki Sakaida2, Shigeomi Hishiki2 (1. Kyushu Univ. (Japan), 2. Air Water Inc. (Japan))

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