[SO-PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-11-12] Improved Polarization and Large Memory window of 3.8V Ferroelectric Hf_0.5Zr_0.5O₂ Capacitor via IGZO Seeding Layer with Hydrogen Plasma Treatment.

Miao-Hua Hsiung¹, 〇You-Chi Chen¹, Ying-Tsan Tang¹ (1. National Central University (Taiwan))

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