[SO-PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization | 2024 International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

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Short Oral Presentation11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[SO-PS-11]11: Advanced Materials: Synthesis / Crystal Growth / Characterization

Tue. Sep 3, 2024 1:30 PM - 1:54 PM JST
Tue. Sep 3, 2024 4:30 AM - 4:54 AM UTC

Room M (Special Conference Room)(4th Floor)

Session Chair: Kentaro Watanabe (Shinshu Univ.), Shunjiro Fujii (Univ. of Hyogo)

1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-11-01]Analysis of inclined structure of threading screw dislocation in SiC using deep X-ray topography

〇Kotaro Ishiji¹, Akio Yoneyama¹, Isaho Kamata², Fumihiro Fujie² (1. SAGA Light Source (Japan), 2. Cen. Res. Inst. Elec. Power Indus. (Japan))

1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-11-02]Defect Annihilation in Sn-Doped Ge Thin-Films on Insulator with High Carrier Mobility by Post-Annealing

〇Ryu Hashimoto¹, Taishiro Koga¹, Takaya Nagano¹, Takashi Kajiwara¹, Kenta Moto¹, Keisuke Yamamoto¹, Taizoh Sadoh¹ (1. Kyushu Univ. (Japan))

1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-11-03]Low-Temperature Reduction and N Doping of Graphene Oxide by Soft X-ray Irradiation and Atomic Hydrogen/Nitrogen

〇Misora Ueshimo¹, Junichi Inamoto¹, Yoshiaki Matsuo¹, Kazuhiro Kanda¹, Koji Sumitomo¹, Akira Heya¹ (1. The Univ. of Hyogo (Japan))

1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-11-04]Thermal scanning probe lithography assisted broadband silicon photodetectors

yang Xu¹, 〇Zongwen Li¹, Zishun Li², Qianqian Zhang¹, Yunfei Xie¹, Feng Tian¹, Muhammad Abid Anwar¹, Srikrishna Chanakya Bodepudi¹, Zhi-Xiang Zhang¹, Jian Chai¹, Xiaorui Zheng², Huan Hu¹, Bin Yu¹, Yang Xu¹ (1. Zhejiang Univ. (China), 2. Westlake Univ. (China))

1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-11-05]Nanographene Synthesis on Quartz Substrate by Polymerization of Pentacene and Dihydropentacene

〇Misaki Nakayama¹, Koji Sumitomo¹, Akira Heya¹ (1. Univ. of Hyogo (Japan))

1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-11-06]GeSn on Insulator Metal-Semiconductor-Metal PhotodetectorBy Layer Transfer Technique

〇Tatsuro Maeda¹, Hiroyuki Ishii¹, Wen Hsin Chang¹, Komei Takagi², Shigehisa Shibayama², Masashi Kurosawa², Osamu Nakatsuka² (1. AIST (Japan), 2. Nagoya Univ. (Japan))

1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-11-07]Theoretical Study on Structural Stability and Miscibility of ScAlN alloys: Effect of Lattice Constraints

〇Takuto Miyamoto¹, Toru Akiyama^1,2, Takahiro Kawamura^1,2 (1. School of Engineering, Mie Univ. (Japan), 2. Innovation Center for Semiconductor and Digital Future, Mie Univ. (Japan))

1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-11-08]Molecular Dynamics Simulation of Si-Cr-C Solutions:
The Effect of Al Addition on SiC Solution Growth

〇Takumi Fukunaga¹, Ryo Iwasa¹, Takahiro Kawamura¹, Shota Seki², Shunta Harada², Toru Ujihara² (1. The Univ. of Mie (Japan), 2. The Univ. of Nagoya (Japan))

1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-11-09]Electronic Structures of the Interface in γ-Nb₄N₃/AlN Superlattice Structures

〇Tomoki Yamaguchi¹, Takahiro Kawamura¹, Toru Akiyama¹, Atsushi Kobayashi² (1. The Univ. of Mie (Japan), 2. The Univ. of Tokyo (Japan))

1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-11-10]Structural Stability and Electronic Properties of (RhGa)₂O₃and (RhAl)₂O₃ Alloys:A First-Principles Study

〇Kenta Matsubara¹, Toru Akiyama^1,2, Takahiro Kawamura^1,2 (1. The Univ. of Mie (Japan), 2. Innovation Center for Semiconductor and Digital Future (Japan))

1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-11-11]Minority Carrier Distribution and Response at Inversion Bias Conditions in MOS Capacitor with Si/SiGe Multi-Quantum Well Structure

〇Noriyuki Taoka¹, Katsunori Makihara², Yuji Yamamoto³, Kentaro Yabashi¹, Satoshi Ohyama¹, Jialun Cai², Yusuke Ichino¹, Yoshiyuki Seike¹, Tatsuo Mori¹ (1. Aichi Institute of Technology (Japan), 2. Nagoya University (Japan), 3. IHP (Germany))

1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-11-12]Improved Polarization and Large Memory window of 3.8V Ferroelectric Hf_0.5Zr_0.5O₂ Capacitor via IGZO Seeding Layer with Hydrogen Plasma Treatment.

Miao-Hua Hsiung¹, 〇You-Chi Chen¹, Ying-Tsan Tang¹ (1. National Central University (Taiwan))

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