2024 International Conference on Solid State Devices and Materials
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Session Details

Short Oral Presentation08: Low Dimensional Devices and Materials

[SO-PS-08]08: Low Dimensional Devices and Materials

Tue. Sep 3, 2024 1:30 PM - 1:52 PM JST
Tue. Sep 3, 2024 4:30 AM - 4:52 AM UTC
Room H (Small Hall)(2nd Floor)
Session Chair: Toshifumi Irisawa (AIST)
1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-08-01]Low Ohmic Contact of Ti/Al on few-layer 2H-MoTe2 achieved using stacked 1T’-MoTe2 interlayers

〇Jinn-Kong Sheu1, Yung-Lan Chuang1, Ping-Feng Chi1, Jing-Wen Zhang1, Jing-Jie Wang1, Chung-Kai Li1, Hao-Wei Lee1, Ming-Lun Lee2 (1. National Cheng Kung University (Taiwan), 2. Southern Taiwan University of Science and Technology (Taiwan))
1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-08-02]Operando Investigation of Optospintronic Devices Based on van der Waals Magnets

〇Martin Zacek1, Vaibhav Varade1, Satyam Sahu2, Matěj Velický2, Martin Kalbáč2, Jana Vejpravová1 (1. Charles University, Faculty of Mathematics and Physics (Czech Republic), 2. J. Heyrovský Institute of Physical Chemistry of the Czech Academy of Sciences, v.v.i. (Czech Republic))
1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-08-03]Control of Strain of Chemical Vapor Deposition Grown Monolayer MoS2 During Transfer Process

Mitsuhiro Okada1, Yuki Okigawa1, 〇Takatoshi Yamada1 (1. AIST (Japan))
1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-08-04]Effective Treatments for Aggregation of Au Thin Films in Selective-Area VLS Growth Process of Ge Nanowires on Si (111)

〇SHUMA YUZAWA1, Shuya Yamaguchi1, Shohei Okuda1, Wipakorn Jevasuwan2, Naoki Fukada2, Shinjiro Hara1 (1. Hokkaido University (Japan), 2. National Institute for Materials Science (Japan))
1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-08-05]Enhancing the resistive switching properties of transparent HfO2-based memristor devices for reliable gasistor

〇Taegi Kim1, Doowon Lee1,2, Myoungsu Chae3, Hee-Dong KIm1 (1. Sejong University (Korea), 2. IHP GmbH—Leibniz Institute for Innovative Microelectronics (Germany), 3. Institute of Industrial Science, University of Tokyo (Japan))
1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-08-06]Al-Catalyzed SiNW-based Si/Ge Core-Shell Heteroarchitectures and Hole Gas Accumulation Enhancement for Transistor Applications

〇Wipakorn Jevasuwan1, Naoki Fukata1 (1. National Institute for Materials Science (NIMS) (Japan))
1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-08-07]Analytical Modeling of WSe2 Negative Capacitance Field-Effect Transistor for Highly Sensitive Biosensors

Xian Wu1, 〇Sen Gao1, Lei Xiao1, Jing Wang1 (1. Tsinghua university (China))
1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-08-08]CNT/PDMS Composite Based Sensors for Tactile Sensation

〇Kang-Hyuk Lee1, Jong-Hyun Na1, Woo-Tae Park1 (1. Seoul National Univ. of Sci. and Tech. (Korea))
1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-08-09]Specific Target Detection beyond Debye Screening Length in Antibody-Modified Epitaxial Graphene FETs on a SiC substrate

〇Keita Murayama1, Yasuhide Ohno1, Masao Nagase1 (1. Tokushima Univ. (Japan))
1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-08-10]Evaluation of Electron-Phonon Coupling Strength and Average Phonon Energies in MoS2 Thin Film

Umidakhon Rayimjonova1,3, Daisuki Kawai1, Ryu Hasunuma2, 〇Muhammad Monirul Islam2, Takeaki Sakurai2 (1. Degree Programs in Pure and Applied Sciences, Graduate School of Science and Technology, University of Tsukuba (Japan), 2. Department of Applied Physics, Institute of Pure and Applied Sciences, University of Tsukuba (Japan), 3. Uzbek-Japan Innovation Center of Youth (Uzbekistan))
1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-08-11]Enhancement of Memory Window for Few-Layer Black Phosphorous FeFET

〇Yen-Shuo Su1, Min-Hung Lee2, Shu-Tong Chang1 (1. National Chung Hsing University (Taiwan), 2. National Taiwan University (Taiwan))
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