Presentation Information

[A-2-03]Threshold Voltage Design for GAAFETs through Work Function Metal Thickness Engineering under Tight Nanosheet Spacing

〇Hiroyuki Ota1, Yukinori Morita1, Kenzo Manabe1, Misako Morota1, Naoya Okada1, Shinji Migita1, Yoshihiro Hayashi1 (1. AIST (Japan))