[A-3] Process Technology and Characterization

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[A-3-01] Interface trap density evaluation of off-angle Si(110)/SiO₂ interface:Toward understanding of interface properties in advanced MOSFET

〇Ryotaro Shimura¹, Eishin Nako¹, Koji Matsumoto², Akihiro Suzuki², Hiroaki Yamamoto², kazuhito Matsukawa², Mitsuru Takenaka¹, Shinichi Takagi¹, Kasidit Toprasertpong¹ (1. The Univ. of Tokyo (Japan), 2. SUMCO Corp. (Japan))