[A-3] Process Technology and Characterization

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[A-3-02] Unveiling Ferroelectric Properties of Co-Injected ALD Hf_xZr_1-xO₂: A Study of Thickness, Composition, and Cryogenic Behavior (73 to 300 K)

〇Kyungsoo Park¹, Minhyuk Kim¹, Chulwon Chung¹, Sunbum Kim¹, Sangkuk Han¹, Changhwan Choi^1,2 (1. Division of Materials Science and Engineering, Univ. of Hanyang (Korea), 2. Department of Semiconductor Engineering, Univ. of Hanyang (Korea))