Presentation Information

[A-3-04]Effective Deep Learning Technology for Predicting High-Aspect Ratio Contact Hole Striation Problem in 3D V-NAND Flash Memory

〇BYUNG YONG CHOI1, HOYUN JUNG1, JONGIK HONG1, YOUNGCHAN PARK1, BONG-TAE PARK1, SEUNGWAN HONG1, SUNG HOI HUR1 (1. Samsung Electronics Co., Ltd. (Korea))