Presentation Information

[A-4-04]Strain and Mobility Enhancement in SiGe-OI pMOSFETs by Low O2 Pressure Ge Condensation

〇Ke Zhou1, Ruocheng Yang1, Junkang Li1,2, Rui Zhang1,2 (1. College of Integrated Circuits, Zhejiang University (China), 2. Zhejiang ICsprout Semiconductor Company Ltd. (China))

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