[A-4] Cryo CMOS and SOI Technology

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[A-4-04] Strain and Mobility Enhancement in SiGe-OI pMOSFETs by Low O₂ Pressure Ge Condensation

〇Ke Zhou¹, Ruocheng Yang¹, Junkang Li^1,2, Rui Zhang^1,2 (1. College of Integrated Circuits, Zhejiang University (China), 2. Zhejiang ICsprout Semiconductor Company Ltd. (China))

DOI:

https://doi.org/10.7567/SSDM.2025.A-4-04

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