2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[A-4]Cryo CMOS and SOI Technology

Wed. Sep 17, 2025 10:45 AM - 12:15 PM JST
Wed. Sep 17, 2025 1:45 AM - 3:15 AM UTC
Room A (301, 3rd Floor)
Session Chair: Anabela Veloso (imec), Satofumi Souma (Kobe Univ.)
10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[A-4-01 (Invited)]Cryogenic characterization of advanced FDSOI devices for quantum computing applications

〇Bruna Cardoso Paz1, Giselle Elbaz1, Johan Pelloux-Prayer1, Pierre-Louis Julliard1, Mathilde Ouvrier-Buffer2, Mikaël Cassé3, Flavio Bergamaschi3, Baptiste Jadot3, Mathieu Darnas3, Renan Lethiecq1, Gregoire Roussely3, Heimanu Niebojewski3, Benoit Bertrand3, Brian Martinez3, Gerard Billiot3, Franck Badets3, Tristan Meunier1, Maud Vinet1 (1. Quobly (France), 2. CNRS Institut Néel (France), 3. CEA-Leti (France))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[A-4-02]Anomalous Variability of Subthreshold Characteristicsin Bulk and SOI MOSFETs at a Cryogenic Temperature

〇Tomoko Mizutani1, Kiyoshi Takeuchi1, Takuya Saraya1, Takumi Inaba2, Hidehiro Asai2, Hiroshi Oka2, Takahiro Mori2, Masaharu Kobayashi1, Toshiro Hiramoto1 (1. The University of Tokyo (Japan), 2. AIST (Japan))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[A-4-03]Planar FD-SOI NFETs with Ultra-Thin Si Body: Device Process Integration

〇Dmitry Batuk1, Sylvain Baudot1, Tom Schram 1, Erik Rosseel1, Aryan Afzalian1, Anish Dangol1, An De Keersgieter1, Anne Vandooren1, Farid Sebaai1, Mohamed Saib1, Emma Vecchio1, Subhobroto Choudhury1, Bianca Chou1, Naoto Horiguchi1, Paul Heremans1 (1. imec (Belgium))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[A-4-04]Strain and Mobility Enhancement in SiGe-OI pMOSFETs by Low O2 Pressure Ge Condensation

〇Ke Zhou1, Ruocheng Yang1, Junkang Li1,2, Rui Zhang1,2 (1. College of Integrated Circuits, Zhejiang University (China), 2. Zhejiang ICsprout Semiconductor Company Ltd. (China))
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[A-4-05]Evaluation of Transient Characteristics on Steep Subthreshold Slope “Gate-Controlled Carrier-Injection SOI-Transistor”

〇Haruki Yonezaki1,2, Takayuki Mori1, Jiro Ida1 (1. Kanazawa Inst. of Tech. (Japan), 2. KIOXIA Corp. (Japan))
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