[B-1] 3D NAND Flash Memory

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[B-1-03] Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash with p-Type Gate

Daewoong Kang¹, 〇Sungho Park^1,2, Joohyo Kim^1,2, Nayoon Kang^1,3, Jeongnam Youn¹, Youngho Jung⁴ (1. Seoul National University (Korea), 2. Chung-Ang University (Korea), 3. Soongsil University (Korea), 4. Daegu University (Korea))