2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-1]3D NAND Flash Memory

Tue. Sep 16, 2025 1:30 PM - 3:00 PM JST
Tue. Sep 16, 2025 4:30 AM - 6:00 AM UTC
Room B (302, 3rd Floor)
Session Chair: Yoshihiro Sato (Tohoku Univ.), Toshinori Numata (Toyota Technological Inst.)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[B-1-01 (Invited)]Horizontal Channel Flash to Explore the Limits of 3D Flash Memory

〇Minoru Oda1, Kosuke Sakamawari1, Shunichi Seno1, Yuki Nakata1, Ryo Fukuoka1, Haruka Kusai1, Keiji Hosotani1, Toru Nakanishi1, Daisuke Hagishima1, Toshiya Ishikawa1, Tatsuo Ogura1, Shinya Naito1, Takashi Kurusu1, Sumiko Mano1, Tsuyoshi1 Ogikubo1, Motohiko Fujimatsu1, Kikuko Sugimae1, Mina Hatakeyama1, Yuki Inuzuka1, Yusuke Niki1, Rieko Tanaka1, Noboru Shibata1, Hiroshi Nakamura1, Makoto Fujiwara1, Koji Matsuo1, Yoshiro Shimojo1, Fumitaka Arai1, Masaki Kondo1, Tomohiro Oki1, Masaru Kito1 (1. Kioxia Corp. (Japan))
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[B-1-02]Area Selective Deposited SiN for Confined Charge Trap Layer in 3D NAND Devices

〇Sana Rachidi1, Laurent Breuil1, Silvia Armini1, Hashimoto Yoshitomo2, Daigo Yamaguchi2, Nakatani Kimihiko2, Jie Li1, Marta Coelho Silva1, Geert Van den Bosch1, Maarten Rosmeulen1,3 (1. imec (Belgium), 2. KOKUSAI ELECTRIC CORPORATION (Japan), 3. KU Leuven (Belgium))
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[B-1-03]Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash with p-Type Gate

Daewoong Kang1, 〇Sungho Park1,2, Joohyo Kim1,2, Nayoon Kang1,3, Jeongnam Youn1, Youngho Jung4 (1. Seoul National University (Korea), 2. Chung-Ang University (Korea), 3. Soongsil University (Korea), 4. Daegu University (Korea))
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[B-1-04]A Novel Structure using p-Doped Polysilicon for Wide Memory Window in ferroelectric 3D NAND Flash

Daewoong Kang1, 〇Nayoon Kang1,2, Sungho Park1,3, Joohyo Kim1,3, Jeongnam Youn1, Youngho Jung4 (1. Seoul National University (Korea), 2. Soongsil University (Korea), 3. Chung-Ang University (Korea), 4. Daegu University (Korea))
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[B-1-05]Enhanced Charge Trapping Characteristics in Flash Memory Using TiN Nanocrystal embedded SiNx Layers

〇Yunseo Im1, San Park1, Sehyeon Choi1, Boncheol Ku1, Seongho Lee1, Hyungjun Kim2, Jaehyun Yang2, Bio Kim2, Youngseon Son2, Hanmei Choi2, Changhwan Choi1 (1. Hanyang Univ. (Korea), 2. Samsung Electronics Co.Ltd. (Korea))
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