[B-1] 3D NAND Flash Memory

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[B-1-04] A Novel Structure using p-Doped Polysilicon for Wide Memory Window in ferroelectric 3D NAND Flash

Daewoong Kang¹, 〇Nayoon Kang^1,2, Sungho Park^1,3, Joohyo Kim^1,3, Jeongnam Youn¹, Youngho Jung⁴ (1. Seoul National University (Korea), 2. Soongsil University (Korea), 3. Chung-Ang University (Korea), 4. Daegu University (Korea))