Presentation Information
[B-1-05]Enhanced Charge Trapping Characteristics in Flash Memory Using TiN Nanocrystal embedded SiNx Layers
〇Yunseo Im1, San Park1, Sehyeon Choi1, Boncheol Ku1, Seongho Lee1, Hyungjun Kim2, Jaehyun Yang2, Bio Kim2, Youngseon Son2, Hanmei Choi2, Changhwan Choi1 (1. Hanyang Univ. (Korea), 2. Samsung Electronics Co.Ltd. (Korea))