[B-2] In-Memory and Unconventional Computing 1

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[B-2-03] Physical Modeling of Oxide-Semiconductor-Channel FeFETs for Content Addressable Memory Circuit Simulation

〇Xuebin Wang¹, Fei Mo^1,2, Zhuo Li⁴, Guanhua Yang³, Masaharu Kobayashi⁴, Yeliang Wang¹ (1. Beijing Inst of Tech. (China), 2. Beijing Inst of Tech.(Zhuhai) (China), 3. The Inst of Microelectronics of the Chinese Academy of Sci. (China), 4. The Univ. of Tokyo (Japan))