[B-3] Ferroelectric Devices

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[B-3-02] Mechanism and Mitigation of Parasitic Resistance in Vertical TiO₂ Channel-All-Around FeFET towards High-Speed Memory Application

〇Kohei Kawaguchi¹, Takamasa Hamai¹, Shoichi Kabuyanagi¹, Shosuke Fujii¹ (1. KIOXIA (Japan))