[B-3] Ferroelectric Devices | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-3]Ferroelectric Devices

Wed. Sep 17, 2025 9:00 AM - 10:15 AM JST
Wed. Sep 17, 2025 12:00 AM - 1:15 AM UTC

Room B (302, 3rd Floor)

Session Chair: Laurent Grenouillet (CEA-Leti), Ming-Hsiu Lee (Macronix International Co., Ltd.)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[B-3-01 (Invited)]HfO₂-based Ferroelectric Devices for Edge AI Application

〇Jun Okuno¹, Yusuke Shuto¹, Kensuke Ota¹, Tsubasa Yonai¹, Ryo Ono¹, Masaki Sakakibara¹, Akihiko Kato¹, Maximilian Lederer², Peter Reinig², Konrad Seidel², Ruben Alcala³, Uwe Schroeder³, Thomas Mikolajick³, Taku Umebayashi¹, Kentaro Akiyama¹ (1. Sony Semiconductor Solutions Corp. (Japan), 2. Fraunhofer IPMS - Center Nanoelectronics Technologies (Germany), 3. NaMLab gGmbH (Germany))

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[B-3-02]Mechanism and Mitigation of Parasitic Resistance in Vertical TiO₂ Channel-All-Around FeFET towards High-Speed Memory Application

〇Kohei Kawaguchi¹, Takamasa Hamai¹, Shoichi Kabuyanagi¹, Shosuke Fujii¹ (1. KIOXIA (Japan))

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[B-3-03]Impact of read operation on memory and synapse characterization of FDSOI FEFET

〇miaomiao zhang¹, haoji qian^1,2, xiaoxi li^1,2, yian ding², yan liu^1,2, chengji jin^1,2, jiajia chen^1,2, genquan han^1,2 (1. Univ. Xidian (China), 2. Tech. Hangzhou Institute,Univ. Xidian (China))

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[B-3-04]A 2 kilo-bits 1-Transistor-and-n-Ferroelectric-tunnel-junctions (1TnFTJ) Array with Voltage-readout and Few-shots Wake-up

〇Yi Xiang Huang¹, Zhi Yuan Chen¹, Chong Wei Chen¹, Yu liang Hsueh¹, Cheng Yi Yang¹, E Ray Hsieh² (1. National Central University (Taiwan), 2. National Yang Ming Chiao Tung University (Taiwan))

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