[B-3] Ferroelectric Devices

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[B-3-03] Impact of read operation on memory and synapse characterization of FDSOI FEFET

〇miaomiao zhang¹, haoji qian^1,2, xiaoxi li^1,2, yian ding², yan liu^1,2, chengji jin^1,2, jiajia chen^1,2, genquan han^1,2 (1. Univ. Xidian (China), 2. Tech. Hangzhou Institute,Univ. Xidian (China))