[B-4] Ferroelectric Memory Devices

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[B-4-01 (Invited)] 22nm FDSOI Hf_0.5Zr_0.5O₂ FeRAM Demonstration for Embedded Applications: from Ferroelectric Capacitors to FeRAM Arrays

〇Simon Martin¹, Carine Jahan¹, Liam Hosier¹, Fabien Grimaud¹, Mélanie Louro¹, Jean Coignus¹, Julien Borrel¹, Catherine Carabasse¹, Christelle Boixaderas¹, Messaoud Bedjaoui¹, Julien Mercier¹, Stéphane Minoret¹, Catherine Euvrard¹, Julian Sturm¹, Corinne Combouroure¹, Ludovic Couture¹, Olivier Glorieux¹, Denys Ly¹, Sébastien Martinie¹, Francois Andrieu¹, Olivier Billoint¹, Laurent Grenouillet¹ (1. CEA-Leti (France))