[B-4] Ferroelectric Memory Devices | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-4]Ferroelectric Memory Devices

Wed. Sep 17, 2025 10:45 AM - 12:15 PM JST
Wed. Sep 17, 2025 1:45 AM - 3:15 AM UTC

Room B (302, 3rd Floor)

Session Chair: Halid Mulaosmanovic (GlobalFoundries), Sanghun Jeon (KAIST)

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[B-4-01 (Invited)]22nm FDSOI Hf_0.5Zr_0.5O₂ FeRAM Demonstration for Embedded Applications: from Ferroelectric Capacitors to FeRAM Arrays

〇Simon Martin¹, Carine Jahan¹, Liam Hosier¹, Fabien Grimaud¹, Mélanie Louro¹, Jean Coignus¹, Julien Borrel¹, Catherine Carabasse¹, Christelle Boixaderas¹, Messaoud Bedjaoui¹, Julien Mercier¹, Stéphane Minoret¹, Catherine Euvrard¹, Julian Sturm¹, Corinne Combouroure¹, Ludovic Couture¹, Olivier Glorieux¹, Denys Ly¹, Sébastien Martinie¹, Francois Andrieu¹, Olivier Billoint¹, Laurent Grenouillet¹ (1. CEA-Leti (France))

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[B-4-02]Enhancing Cryogenic Performance of BEOL-Compatible FE NVMs via Extended 400 ^oC Annealing: 60 % Ec Boost, Robust 2Pr, Near-Fatigue-Free Endurance, and Selector-Free FeRAM Operation

〇Cheng-Hung Wu¹, Jia-Tai Wu¹, Wei-Tung Chen¹, Chun-Jung Su^2,3, Vita Pi-Ho Hu¹ (1. National Taiwan Uni. (Taiwan), 2. National Yang Ming Chiao Tung Uni. (Taiwan), 3. Taiwan Semiconductor Research Inst. (Taiwan))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[B-4-03]Impact of Write Condition and Wake-up on Charge Distribution and Imprint Behaviors in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors

〇Zhenhong Liu¹, Zuochen Cai¹, Mitsuru Takenaka¹, Shinichi Takagi¹, Kasidit Toprasertpong¹ (1. The Univ. of Tokyo (Japan))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[B-4-04]Endurance Improvement in Defect-Engineered HfO₂-Based MFS Ferroelectric Capacitors with Non-Destructive Readout

〇Peiyuan Du^1,2, Huan Liu^1,2, Dongya Li^1,2, Hongrui Zhang^1,2, Bing Chen^1,2, Ran Cheng³, Mengnan Ke⁴, Xiao Yu^1,2, Yan Liu¹, Yue Hao¹, Genquan Han^1,2 (1. Xidian Univ. (China), 2. Hangzhou Inst. of Tech., Xidian Univ. (China), 3. Zhejiang Univ. (China), 4. Yokohama National Univ. (Japan))

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[B-4-05]Unraveling the Frequency-Dependent Accelerated Degradation Mechanism in HfO2-Based 3D Trench Ferroelectric Capacitors

〇Fei Yu^1,2, Xingcheng Jin³, Chongyong Guo³, Hongbo Li³, Huan Liu^1,2, Haoji Qian², Bing Chen^1,2, Yan Liu^1,2, Xiao Yu^1,2, Genquan Han^1,2 (1. The School of Microelectronics, Xidian Univ. (China), 2. Hangzhou Inst. of Tech.,Xidian Univ. (China), 3. China Resources Microelectronics Ltd. (China))

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Session Details

[B-4]Ferroelectric Memory Devices

[B-4-01 (Invited)]22nm FDSOI Hf0.5Zr0.5O2 FeRAM Demonstration for Embedded Applications: from Ferroelectric Capacitors to FeRAM Arrays

[B-4-02]Enhancing Cryogenic Performance of BEOL-Compatible FE NVMs via Extended 400 oC Annealing: 60 % Ec Boost, Robust 2Pr, Near-Fatigue-Free Endurance, and Selector-Free FeRAM Operation

[B-4-03]Impact of Write Condition and Wake-up on Charge Distribution and Imprint Behaviors in Hf0.5Zr0.5O2 Ferroelectric Capacitors

[B-4-04]Endurance Improvement in Defect-Engineered HfO2-Based MFS Ferroelectric Capacitors with Non-Destructive Readout

[B-4-05]Unraveling the Frequency-Dependent Accelerated Degradation Mechanism in HfO2-Based 3D Trench Ferroelectric Capacitors

[B-4-01 (Invited)]22nm FDSOI Hf_0.5Zr_0.5O₂ FeRAM Demonstration for Embedded Applications: from Ferroelectric Capacitors to FeRAM Arrays

[B-4-02]Enhancing Cryogenic Performance of BEOL-Compatible FE NVMs via Extended 400 ^oC Annealing: 60 % Ec Boost, Robust 2Pr, Near-Fatigue-Free Endurance, and Selector-Free FeRAM Operation

[B-4-03]Impact of Write Condition and Wake-up on Charge Distribution and Imprint Behaviors in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors

[B-4-04]Endurance Improvement in Defect-Engineered HfO₂-Based MFS Ferroelectric Capacitors with Non-Destructive Readout