[B-4] Ferroelectric Memory Devices

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[B-4-02] Enhancing Cryogenic Performance of BEOL-Compatible FE NVMs via Extended 400 ^oC Annealing: 60 % Ec Boost, Robust 2Pr, Near-Fatigue-Free Endurance, and Selector-Free FeRAM Operation

〇Cheng-Hung Wu¹, Jia-Tai Wu¹, Wei-Tung Chen¹, Chun-Jung Su^2,3, Vita Pi-Ho Hu¹ (1. National Taiwan Uni. (Taiwan), 2. National Yang Ming Chiao Tung Uni. (Taiwan), 3. Taiwan Semiconductor Research Inst. (Taiwan))