[B-4] Ferroelectric Memory Devices

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[B-4-03] Impact of Write Condition and Wake-up on Charge Distribution and Imprint Behaviors in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors

〇Zhenhong Liu¹, Zuochen Cai¹, Mitsuru Takenaka¹, Shinichi Takagi¹, Kasidit Toprasertpong¹ (1. The Univ. of Tokyo (Japan))