[B-4] Ferroelectric Memory Devices

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[B-4-04] Endurance Improvement in Defect-Engineered HfO₂-Based MFS Ferroelectric Capacitors with Non-Destructive Readout

〇Peiyuan Du^1,2, Huan Liu^1,2, Dongya Li^1,2, Hongrui Zhang^1,2, Bing Chen^1,2, Ran Cheng³, Mengnan Ke⁴, Xiao Yu^1,2, Yan Liu¹, Yue Hao¹, Genquan Han^1,2 (1. Xidian Univ. (China), 2. Hangzhou Inst. of Tech., Xidian Univ. (China), 3. Zhejiang Univ. (China), 4. Yokohama National Univ. (Japan))