[B-5] Ferroelectric FET

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[B-5-02] Enhancing Erase Efficiency in Oxide Semiconductor FeFET through Post-Deposition Annealing Engineering

〇Minglei Ma¹, Haoji Qian¹, Miaomiao Zhang¹, Yian Ding¹, Xiaoxi Li¹, Bochang Li¹, Yan Liu¹, Jiajia Chen¹, Chengji Jin¹, Genquan Han¹ (1. Xidian Univ. (China))

DOI:

https://doi.org/10.7567/SSDM.2025.B-5-02

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