[B-5] Ferroelectric FET | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-5]Ferroelectric FET

Thu. Sep 18, 2025 9:00 AM - 10:15 AM JST
Thu. Sep 18, 2025 12:00 AM - 1:15 AM UTC

Room B (302, 3rd Floor)

Session Chair: Toshinori Numata (Toyota Technological Inst.), Halid Mulaosmanovic (GlobalFoundries)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[B-5-01 (Invited)]Recent Advances and Outlook on Ferroelectric NAND Technology

〇Sijung Yoo¹, Duk-Hyun Choe¹, Jinseong Heo¹ (1. Samsung Electronics (Korea))

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[B-5-02]Enhancing Erase Efficiency in Oxide Semiconductor FeFET through Post-Deposition Annealing Engineering

〇Minglei Ma¹, Haoji Qian¹, Miaomiao Zhang¹, Yian Ding¹, Xiaoxi Li¹, Bochang Li¹, Yan Liu¹, Jiajia Chen¹, Chengji Jin¹, Genquan Han¹ (1. Xidian Univ. (China))

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[B-5-03]Evaluation of Polarization-Induced Interface Degradations in FeFETs Using Quasi-Static Split C-V Techniques: Comparison of Oxide-Semiconductor and Si Channels

〇Xuanhedong Gao¹, Zuocheng Cai¹, Zhenghong Liu¹, Zhao Jin¹, Xueyang Han¹, Yan-kui Liang¹, Yutong Chen¹, Eishin Nako¹, Shin-Yi Min¹, Mitsuru Takenaka¹, Shinichi Takagi¹, Kasidit Toprasertpong¹ (1. The Univ. of Tokyo (Japan))

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[B-5-04]Understanding and Improving the Retention Loss in the Gate-Injection Ferroelectric NAND Cells by Optimizing the Retention Bias Voltage

〇Runhao Han¹, Tao Hu¹, Jia Yang¹, Junshuai Chai¹, Hao Xu¹, Xiaolei Wang¹, Wenwu Wang¹ (1. Inst. of Microelectronics Chinese Academy of Sciences (China))

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