[B-6] Emerging Memory Devices, and MRAM

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[B-6-01 (Invited)] Recent progress in materials design for voltage-controlled magnetic random access memory

〇Takayuki Nozaki¹, Tomohiro Ichinose¹, Tatsuya Yamamoto¹, Jun Uzuhashi², Tomohiro Nozaki¹, Hiroyasu Nakayama¹, Atsushi Sugihara¹, Makoto Konoto¹, Kay Yakushiji¹, Tadakatsu Ohkubo², Shinji Yuasa¹ (1. AIST (Japan), 2. NIMS (Japan))