2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-6]Emerging Memory Devices, and MRAM

Thu. Sep 18, 2025 10:45 AM - 12:15 PM JST
Thu. Sep 18, 2025 1:45 AM - 3:15 AM UTC
Room B (302, 3rd Floor)
Session Chair: Keiji Hosotani (KIOXIA Corp.), Yoshihiro Sato (Tohoku Univ.)
10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[B-6-01 (Invited)]Recent progress in materials design for voltage-controlled magnetic random access memory

〇Takayuki Nozaki1, Tomohiro Ichinose1, Tatsuya Yamamoto1, Jun Uzuhashi2, Tomohiro Nozaki1, Hiroyasu Nakayama1, Atsushi Sugihara1, Makoto Konoto1, Kay Yakushiji1, Tadakatsu Ohkubo2, Shinji Yuasa1 (1. AIST (Japan), 2. NIMS (Japan))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[B-6-02]A Cache-Compatible 4T2MTJ MRAM Enabling Compute-in-Memory Adders

Zhengde Xu1, Xiaoyan Zhang2, Dongyang Chen1, Xue Zhang1, Xuanyao Fong2, 〇Zhifeng Zhu1 (1. Shanghaitech University (China), 2. National University of Singapore (Singapore))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[B-6-03]A Novel 2-kbits 28-nm Logic-Compatible AVAXOTP Macro for Embedded Data Storage Applications

〇Yuan Heng Tseng3, Chi-Da Lu2, Pei-Jyun Hou2, E Ray Hsieh1 (1. National Yang Ming Chiao Tung University (Taiwan), 2. National Central University (Taiwan), 3. eRaytroniks Inc. (Taiwan))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[B-6-04]Bi-directional Read Scheme for High Density FinFET Based Multilevel OTP Memory

〇FANGYU YE1, BINGRONG TANG1, CHRONGJUNG LIN1, YACHIN KING1 (1. The Inst. of Electronics Eng. , Univ. of National Tsing Hua (NTHU) (Taiwan))
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[B-6-05]Threshold Changeable Memory Based on Amorphous GeSbSeN

〇Mohamad Kanaan1,2,3, Renzo Antonelli2,3, Massimo Borghi4, Jean Rottner2, Mathieu Bernard2, Zineb Saghi2, Theo Monniez2, Guillaume Bourgeois2, Sylvain Gout2, Antoine Salvi2, Francois Andrieu2, Abdelkader Souifi3, Simon Jeannot1, Gabriele Navarro2 (1. STMicroelectronics Crolles Indus. (France), 2. CEA-LETI Lab. (France), 3. LTM Lab. (France), 4. STMicroelectronics Agrate Indus. (Italy))
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