[B-6] Emerging Memory Devices, and MRAM

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[B-6-05] Threshold Changeable Memory Based on Amorphous GeSbSeN

〇Mohamad Kanaan^1,2,3, Renzo Antonelli^2,3, Massimo Borghi⁴, Jean Rottner², Mathieu Bernard², Zineb Saghi², Theo Monniez², Guillaume Bourgeois², Sylvain Gout², Antoine Salvi², Francois Andrieu², Abdelkader Souifi³, Simon Jeannot¹, Gabriele Navarro² (1. STMicroelectronics Crolles Indus. (France), 2. CEA-LETI Lab. (France), 3. LTM Lab. (France), 4. STMicroelectronics Agrate Indus. (Italy))