[B-8] Ferroelectric Memory Materials

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[B-8-02] Enhanced Permittivity in Ga-Doped Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors via Morphotropic Phase Boundary Engineering

〇Zi-Ying Huang¹, Yu-Chun Li¹, Lei Shen¹, David Wei Zhang^1,2, Hong-Liang Lu^1,2 (1. Fudan Univ. (China), 2. National Integrated Circuit Innovation Center (China))