Session Details

[B-8]Ferroelectric Memory Materials

Thu. Sep 18, 2025 3:15 PM - 4:30 PM JST
Thu. Sep 18, 2025 6:15 AM - 7:30 AM UTC
Room B (302, 3rd Floor)
Session Chair: Ming-Hsiu Lee (Macronix International Co., Ltd.), Laurent Grenouillet (CEA-Leti)

[B-8-01]Uniform La-Doping in HZO Ferroelectric Film Enables Ultra-Low Coercive Field of 0.72 MV/cm at 10 kHz

〇Ze-Kun Zhao1, Yu-Long Jiang1, Dongdong Li2, Shan-Ting Zhang2 (1. Fudan Univ. (China), 2. Zhangjiang Lab. (China))

[B-8-02]Enhanced Permittivity in Ga-Doped Hf0.5Zr0.5O2 Ferroelectric Capacitors via Morphotropic Phase Boundary Engineering

〇Zi-Ying Huang1, Yu-Chun Li1, Lei Shen1, David Wei Zhang1,2, Hong-Liang Lu1,2 (1. Fudan Univ. (China), 2. National Integrated Circuit Innovation Center (China))

[B-8-03]Enhanced Polarization and Switching Dynamics in Yttrium-Doped Hf0.5Zr0.5O2 Metal-Ferroelectric-Metal Capacitors at 4 K

〇Ankit Agarwal1, Cyun-Siang Lin1, Zhe-Wei Zheng1, Chun-Jung Su2, Wiiliam Cheng-Yu Ma3, Kuo-Hsing Kao1 (1. Department of Electrical Engineering, National Cheng Kung Univ. (Taiwan), 2. Department of Electrophysics and Inst. of Electronics, National Yang-Ming Chiao Tung Univ. (Taiwan), 3. Department of Electrical Engineering, National Sun Yat-sen Univ. (Taiwan))

[B-8-04]Ultra-High-κ Hf0.5Zr0.5O2 Capacitors Assisted by Interfacial Layer Engineering

〇Qiang Gao1, Danyang Chen1, Lu Wang2, Zhiyu Lin1, Mengwei Si1, Dongdong Li2, Xiuyan Li1 (1. Shanghai Jiao Tong Univ. (China), 2. Zhangjiang Lab. (China))

[B-8-05]Wake-Up-Free and High-Endurance Ferroelectric Capacitors Enabled by Co-Optimization of ZrN Interface Engineering and Microwave Annealing

〇Sheng-Ying Lu1, Ching-Hsien Wang1, Yung-Hsien Hsu Wu1 (1. National Tsing Hua University (Taiwan))