[B-8] Ferroelectric Memory Materials

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[B-8-03] Enhanced Polarization and Switching Dynamics in Yttrium-Doped Hf_0.5Zr_0.5O₂ Metal-Ferroelectric-Metal Capacitors at 4 K

〇Ankit Agarwal¹, Cyun-Siang Lin¹, Zhe-Wei Zheng¹, Chun-Jung Su², Wiiliam Cheng-Yu Ma³, Kuo-Hsing Kao¹ (1. Department of Electrical Engineering, National Cheng Kung Univ. (Taiwan), 2. Department of Electrophysics and Inst. of Electronics, National Yang-Ming Chiao Tung Univ. (Taiwan), 3. Department of Electrical Engineering, National Sun Yat-sen Univ. (Taiwan))