[B-8] Ferroelectric Memory Materials

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[B-8-05] Wake-Up-Free and High-Endurance Ferroelectric Capacitors Enabled by Co-Optimization of ZrN Interface Engineering and Microwave Annealing

〇Sheng-Ying Lu¹, Ching-Hsien Wang¹, Yung-Hsien Hsu Wu¹ (1. National Tsing Hua University (Taiwan))