[E-4] ReRAM

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[E-4-02] Characterization and Modeling of 16nm FinFET 3D Stackable Via RRAM

〇Wei-Hwa Lin¹, Tsung-Pei Yang¹, Kai-Ching Chuang¹, Howard Tseng², Tassa Yang², Sung-Po Liao², Tim Chung², Ya-Chin King¹, Chrong Jung Lin¹ (1. Inst. of Electronics Engineering, National Tsing Hua Univ. (Taiwan), 2. Memory and Product Diagnosis Engineering Division(MDED), Taiwan Semiconductor Manufac. Company (Taiwan))

DOI:

https://doi.org/10.7567/SSDM.2025.E-4-02

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