[E-4] ReRAM | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[E-4]ReRAM

Wed. Sep 17, 2025 10:45 AM - 12:15 PM JST
Wed. Sep 17, 2025 1:45 AM - 3:15 AM UTC

Room E (311, 3rd Floor)

Session Chair: Wein-Town Sun (eMemory Tech. Inc.), Atsushi Himeno (Panasonic Holdings Corp.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[E-4-01]Experimental Demonstration of Elliptical-shaped CMOS Process-compatible TaOx/HfO₂ ReRAM in 3D Structure

〇Park Minsik¹, Lee Aryeong¹, Park Solji¹, Sim Gapseop^1,2, Song Jonghyun^1,2, Park Namsoo², Cho Huijae², Kwon Soohyun², Kang Minho², Kim Youngjoo², Kim Heejong², Kwon Youna², Jeon Kanghyeok², Sul Woosuk², Kim Choulyoung¹, Ko Hyoungho¹, Lee Wonchul^1,2, Lee jongwon¹ (1. Chungnam National Univ. (Korea), 2. National Nanofab Center (Korea))

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[E-4-02]Characterization and Modeling of 16nm FinFET 3D Stackable Via RRAM

〇Wei-Hwa Lin¹, Tsung-Pei Yang¹, Kai-Ching Chuang¹, Howard Tseng², Tassa Yang², Sung-Po Liao², Tim Chung², Ya-Chin King¹, Chrong Jung Lin¹ (1. Inst. of Electronics Engineering, National Tsing Hua Univ. (Taiwan), 2. Memory and Product Diagnosis Engineering Division(MDED), Taiwan Semiconductor Manufac. Company (Taiwan))

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[E-4-03]Sub-1V/50ns Write/Erase of Ag/Ti/GeS/Pt Crossbar CBRAM via Pulse Optimization for High-Density Embedded Nonvolatile Memory

〇Bolin Ji¹, Zhiyuan He¹, Asif Ali¹, Diing Shenp Ang¹ (1. Nanyang Technological University (Singapore))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[E-4-04]Forming- Free Ag/GeTe/GeS/GeTe/Ag Bidirectional Selector with Tunable High On-Current (~1mA), ~50ns On/Off Delay and >10¹⁰ Endurance Cycles at 1V Pulse

〇Asif Ali¹, Jiayi Li¹, Bolin Ji¹, Diing Shenp Ang¹ (1. Nanyang Technological University (Singapore))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[E-4-05]Multi-Level Self-Selective Memristor for Reliable Sparse Matrix Encryption

〇Guobin Zhang^1,2, Zijian Wang^1,2, Xuemeng Fan^1,2, Guobin Zhang^1,2 (1. Zhejiang Univ. (China), 2. ZJU-Hangzhou Global Sci. and Tech. Innovation Center (China))

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[E-4-06]Cryogenic RRAM Analog Synapse (CRAS) for Unconventional Computing Systems

〇Yunsur Kim¹, Jiyong Woo¹ (1. Kyungpook National Univ. (Korea))

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