[G-6] Materials for Photodetector

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[G-6-02] Light-Absorbing Layer Thickness Dependence of Polarization-Sensitive Photodiodes Based on Dilute Nitride GaNAs

〇Daiki Mineyama¹, Itsu Tanaka¹, Kaito Nakama², Hidetoshi Hashimoto², Keisuke Minehisa², Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1. IST, Hokkaido Univ. Japan (Japan), 2. RCIQE, Hokkaido Univ. Japan (Japan))