Session Details
[G-6]Materials for Photodetector
Thu. Sep 18, 2025 10:45 AM - 11:45 AM JST
Thu. Sep 18, 2025 1:45 AM - 2:45 AM UTC
Thu. Sep 18, 2025 1:45 AM - 2:45 AM UTC
Room G (313, 3rd Floor)
Session Chair: Hideki Ono (OKI), Xuejun Xu (Nippon Telegraph and Telephone Corporation)
[G-6-01]Cutoff Wavelength Control of GeSn HOT Infrared Detectors by Sn Concentration
〇Tomo Tanaka1, Hiroyuki Ishii2, Rahmat Hadi Saputro2, Shigehisa Shibayama3, Masashi Kurosawa3, Osamu Nakatsuka3, Tatsuro Maeda2 (1. NEC Corp. (Japan), 2. AIST (Japan), 3. Nagoya Univ. (Japan))
[G-6-02]Light-Absorbing Layer Thickness Dependence of Polarization-Sensitive Photodiodes Based on Dilute Nitride GaNAs
〇Daiki Mineyama1, Itsu Tanaka1, Kaito Nakama2, Hidetoshi Hashimoto2, Keisuke Minehisa2, Junichi Takayama1, Fumitaro Ishikawa2, Akihiro Murayama1, Satoshi Hiura1 (1. IST, Hokkaido Univ. Japan (Japan), 2. RCIQE, Hokkaido Univ. Japan (Japan))
[G-6-03]CMOS-Compatible Ge-on-Si SPAD Array for Room-Temperature SWIR Detection with High PDE and Low DCR
〇Chi-En Chen1, Jau-Yang Wu2, Chao-Hsin Wu1 (1. National Taiwan University (Taiwan), 2. National Taiwan University of Science and Technology (Taiwan))
[G-6-04 (Late News)]Exploring the Cryogenic Liquid Level Sensing Capability of NiTi-Coated Optical Fiber
〇Navneet Chouhan1, Nandini Patra1, I. A. Palani1, Vipul Singh1 (1. Indian Institute of Technology, Indore (India))