[H-1] Group IV Materials

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[H-1-03] Control of Three-Dimensionally Aligned SiGe Nanodot Superlattice Formation by Strain Engineering Using SiGe Virtual Substrate

〇Wei-Chen Wen¹, Katsunori Makihara^2,1, Andreas Mai^1,3, Bernd Tillack^1,4, Yuji Yamamoto^1,2 (1. IHP - Leibniz-Institut für innovative Mikroelektronik (Germany), 2. Nagoya Univ. (Japan), 3. Technical Univ. of Applied Science Wildau (Germany), 4. Technische Universität Berlin (Germany))