Session Details

[H-1]Group IV Materials

Tue. Sep 16, 2025 1:30 PM - 3:00 PM JST
Tue. Sep 16, 2025 4:30 AM - 6:00 AM UTC
Room H (314, 3rd Floor)
Session Chair: Taizoh Sadoh (Kyushu Univ.), Katsunori Makihara (Nagoya Univ.)

[H-1-01 (Invited)]Advanced Si / SiGe epitaxy process for beyond 2nm technology node

〇Shogo Mochizuki1 (1. IBM Res. (United States of America))

[H-1-02]Atomic Layer Epitaxy of Si in Ge

〇Yuji Yamamoto1,2, Wei-Chen Wen1, Markus Andreas Schubert1, Daniel Steckler1, Junichi Murota3, Bernd Tillack1,4 (1. IHP - Leibniz-Inst. für innovative Mikroelektronik (Germany), 2. Nagoya Univ. (Japan), 3. Micro System Integration Center, Tohoku Univ. (Japan), 4. Tech. Univ. Berlin (Germany))

[H-1-03]Control of Three-Dimensionally Aligned SiGe Nanodot Superlattice Formation by Strain Engineering Using SiGe Virtual Substrate

〇Wei-Chen Wen1, Katsunori Makihara2,1, Andreas Mai1,3, Bernd Tillack1,4, Yuji Yamamoto1,2 (1. IHP - Leibniz-Institut für innovative Mikroelektronik (Germany), 2. Nagoya Univ. (Japan), 3. Technical Univ. of Applied Science Wildau (Germany), 4. Technische Universität Berlin (Germany))

[H-1-04]Epitaxial Growth of Ultra-High Sn Composition Ge0.5Sn0.5
and Possible Formation of Ge–Sn Ordered Bonds

〇Kaito Shibata1, Shigehisa Shibayama1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1. Grad. Sch. of Eng., Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan))

[H-1-05]Fabrication of ultra-high density periodic Si nanowire arrays using monolayer self-assembly of polystyrene nanospheres

〇Hiroki Iwata1, Kentaro Watanabe1,2 (1. Shinshu Univ. (Japan), 2. IFES, Shinshu Univ. (Japan))