[H-2] Wide Bandgap and Oxide Materials I

3:30 PM - 4:00 PM JST(6:30 AM - 7:00 AM UTC)

[H-2-01 (Invited)] Recent Advances in ScAIN/GaN-based High Electron Mobility Transistors

〇Takuya Maeda¹, Atsushi Kobayashi² (1. The Univ. of Tokyo (Japan), 2. Tokyo Univ. of Science)