[H-2] Wide Bandgap and Oxide Materials I | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[H-2]Wide Bandgap and Oxide Materials I

Tue. Sep 16, 2025 3:30 PM - 4:45 PM JST
Tue. Sep 16, 2025 6:30 AM - 7:45 AM UTC

Room H (314, 3rd Floor)

Session Chair: Takuya Hoshi (NTT Device Technology Lab.), Yoriko Tominaga (Hiroshima Univ.)

3:30 PM - 4:00 PM JST(6:30 AM - 7:00 AM UTC)

[H-2-01 (Invited)]Recent Advances in ScAIN/GaN-based High Electron Mobility Transistors

〇Takuya Maeda¹ (1. The Univ. of Tokyo (Japan))

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[H-2-02]Machine Learning Prediction of Global Photonic Bandgaps in GaN Visible Topological PhCs with Triangular Holes

〇Hinaki Sugiura¹, Akihiko Kikuchi^1,2 (1. Sophia Univ. (Japan), 2. Sophia Semiconductor Research Inst. (Japan))

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[H-2-03]Multi-Scale Strain Landscape of Al_1-xGa_xN/GaN/Si Heterostructures Probed by X-ray Diffraction Microscopy

〇Cedric Xavier Corley-Wiciak¹, Pierre Everaere¹, Laura Neumann², Agnieszka Anna Corley-Wiciak¹, Ennio Tito Capria¹, Carsten Detlevs¹, Michael Reisinger³, Thu Nhi Tran Caliste¹, Tobias Urs Schulli¹ (1. European Synchrotron Radiation Facility (France), 2. Microelectronics and Nanoanalytic, Fraunhofer Institute for Ceramic Technologies and Systems (Germany), 3. Kompetenzzentrum Automobil- und Industrieelektronik GmbH (Austria))

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[H-2-04]Structures and Adsorption Behavior on N-polar GaN(000-1) Surface with Steps and Kinks: A First-Principles Study

〇Toru Akiyama^1,2, Taiki Tahara¹, Takahiro Kawamura^1,2 (1. Graduate School of Engineering, Mie Univ. (Japan), 2. ICSDF, Mie Univ. (Japan))