[H-4] Characterization and Device Applications

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[H-4-03] Mapping of the Lattice Strain Tensor in Defect-Free Si_1-xGe_x/SOI Multilayers Fabricated by Lateral-Selective Heteroepitaxy

〇Cedric Xavier Corley-Wiciak¹, Chen-Hsun Lu², Agnieszka Anna Corley-Wiciak^1,3, Edoardo Zatterin¹, Markus Andreas Schubert⁴, Carsten Richter², Wei-Chen Wen⁴, Marvin Hartwig Zoellner⁴, Yuji Yamamoto^4,5 (1. European Synchrotron Radiation Facility (France), 2. Leibniz-Inst. for Crystal Growth (Germany), 3. RWTH Aachen Univ. (Germany), 4. Leibniz-Inst. for Innovations for High Performance Microelectronics (Germany), 5. Nagoya Univ. (Japan))