[H-5] Low Dimensional Materials I

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[H-5-03] The Preparation of Wafer-scale Bi-layer MoS₂ through Sequential Mono-layer MoS₂ Growth for Device Applications

〇Yu-Han Huang^1,2, Hao-Yu Wang^1,3, Po-Tsung Lee³, Shih-Yen Lin¹ (1. Academia Sinica (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. National Yang Ming Chiao Tung Univ. (Taiwan))