[H-5] Low Dimensional Materials I | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[H-5]Low Dimensional Materials I

Thu. Sep 18, 2025 9:00 AM - 10:15 AM JST
Thu. Sep 18, 2025 12:00 AM - 1:15 AM UTC

Room H (314, 3rd Floor)

Session Chair: Yuji Yamamoto (IHP GmbH), Yu-Lun Chueh (National Tsing-Hua Univ.)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[H-5-01 (Invited)]Chemical Vapor Deposition of Single Crystal Graphene, Graphene Nanoribbons, and hBN on Ge and Ge-on-Si and Related Device Applications

〇Micheal Arnold¹ (1. Univ. of Wisconsin-Madison (United States of America))

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[H-5-02]Van der Waals Growth of Silicon on 2D h-BN by Molecular Beam Epitaxy

〇Yu-Hsien Chuang², Kuo-Chih Lee², Hung-Hsiang Cheng², Ing-Song YU¹ (1. National Dong Hwa University (Taiwan), 2. National Taiwan University (Taiwan))

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[H-5-03]The Preparation of Wafer-scale Bi-layer MoS₂ through Sequential Mono-layer MoS₂ Growth for Device Applications

〇Yu-Han Huang^1,2, Hao-Yu Wang^1,3, Po-Tsung Lee³, Shih-Yen Lin¹ (1. Academia Sinica (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. National Yang Ming Chiao Tung Univ. (Taiwan))

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[H-5-04]MoS₂precursor-catalyst solution coating on Si substrate for selective CVD growth

〇Ryunosuke Nishimura¹, Kentaro Watanabe^1,2 (1. Shinshu Univ. (Japan), 2. IFES, Shinshu Univ. (Japan))

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