2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[H-5]Low Dimensional Materials I

Thu. Sep 18, 2025 9:30 AM - 10:15 AM JST
Thu. Sep 18, 2025 12:30 AM - 1:15 AM UTC
Room H (314, 3rd Floor)
Session Chair: Yuji Yamamoto (IHP GmbH), Yu-Lun Chueh (National Tsing-Hua Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[H-5-02]Van der Waals Growth of Silicon on 2D h-BN by Molecular Beam Epitaxy

〇Yu-Hsien Chuang1, Kuo-Chih Lee2, Hung-Hsiang Cheng2, Ing-Song YU3 (1. Graduate School of Advanced Technology, National Taiwan University, No.1, Sec.4, Roosevelt Rd., Taipei 106319 (Taiwan), 2. Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, No.1, Sec.4, Roosevelt Rd., Taipei 106319 (Taiwan), 3. Department of Materials Science and Engineering, National Dong Hwa University, No.1, Sec.2, Dahsueh Rd., Shoufeng, Hualien 974301  (Taiwan))
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[H-5-03]The Preparation of Wafer-scale Bi-layer MoS2 through Sequential Mono-layer MoS2 Growth for Device Applications

〇Yu-Han Huang1,2, Hao-Yu Wang1,3, Po-Tsung Lee3, Shih-Yen Lin1 (1. Academia Sinica (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. National Yang Ming Chiao Tung Univ. (Taiwan))
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[H-5-04]MoS2 precursor-catalyst solution coating on Si substrate for selective CVD growth

〇Ryunosuke Nishimura1, Kentaro Watanabe1,2 (1. Shinshu Univ. (Japan), 2. IFES, Shinshu Univ. (Japan))
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