[J-5] In-Memory and Unconventional Computing 2

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[J-5-01] Fluorine Surface Engineering for V_t Control and Memory Window Boost in HZO FeFET toward High-Performance Analog In-Memory Computing.

〇Kyungsoo Park¹, Sangkuk Han¹, Chulwon Chung¹, MinHyuk Kim¹, Changhwan Choi^1,2 (1. Division of Materials Science and Engineering, Univ. of Hanyang (Korea), 2. Department of Semiconductor Engineering, Univ. of Hanyang (Korea))